Marchmont?s focus on innovation: Nizhny university researchers create new memory

Marchmont?s focus on innovation: Nizhny university researchers create new memoryNizhny Novgorod scientists are said to have developed a prototype operational component of what they refer to as the next generation of resistive switching random access memory

We?ll take a closer look today at a potentially disruptive technology from Nizhny Novgorod in the mid-Volga area. Local innovative scientists are said to have developed a prototype operational component of what they refer to as the next generation of resistive switching random access memory (RRAM). A likely archrival to the widespread flash memory technology in a near future, the new storage device might one day win over markets with its speed of operation, packing density and low cost. Flash memory is far from flawless, and sophisticated customers seek to try out new and superior storage devices. The technology may also take on a new dimension as the researchers are working to broaden our horizons in perceiving how artificial intelligence of tomorrow may look like. This early-stage effort is yet another in a series of high-tech Nizhny Novgorod projects to keep tabs on...