The developer of Schottky innovative diodes attracted 5 M RUR

The developer of Schottky innovative semiconductor diodes Polytype, LLC will get 5 M RUR from the EL Silicon Group Company for the technology development. Under the terms of the contract the work must be completed by February, 2013 and it is planned in the same year to begin mass production of high-quality diode switches named after German physicist Walter Schottky.

The Development Director of Silicon Group EL, JSC (Bryansk) Vladimir Gromov reported on this innovation news to media.

Polytype, LLC (St. Petersburg) was established at the Physico-Technical Institute named after A. F. Ioffe. The company develops high-power field transistors with managing p-n-transition based on silicon carbide semiconductor for energy efficient converters of new-generation.

According to Gromov, devices based on silicon carbide are of high voltage and high-reliability and can be used in high temperatures and radiation that is extremely important for military and space industries. Schottky diode is a semiconductor diode with low voltage drop when switched on.

Silicon Group EL expects to receive a complete technological route of producing the products from St. Petersburg developers that should be adapted to the technological processes and equipment of Bryansk plant. The development of new products will raise the development of components for power electronics to a qualitatively new level, which is a priority for our company - said the director of Bryansk production.

Director of Development added that the market’s demand for innovation is very high.